Article Versions Notes

Kim S, Kim J, Jang D, Ritzenthaler R, Parvais B, Mitard J, Mertens H, Chiarella T, Horiguchi N, Lee JW. Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET. Applied Sciences. 2020; 10(8):2979. https://doi.org/10.3390/app10082979

Kim, Soohyun, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi, and Jae Woo Lee. 2020. "Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET" Applied Sciences 10, no. 8: 2979. https://doi.org/10.3390/app10082979

Kim, S., Kim, J., Jang, D., Ritzenthaler, R., Parvais, B., Mitard, J., Mertens, H., Chiarella, T., Horiguchi, N., & Lee, J. W. (2020). Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET. Applied Sciences, 10(8), 2979. https://doi.org/10.3390/app10082979