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Open AccessArticle

Optical and Galvanomagnetic Properties of Bi1-xSbx Thin Films in the Terahertz Frequency Range

1
Terahertz Biomedicine Laboratory, ITMO University, 197101 Saint-Petersburg, Russia
2
Faculty of Cryogenic Engineering, ITMO University, 197101 Saint-Petersburg, Russia
3
International Scientific and Research Institute of Bioengineering, ITMO University, 197101 Saint-Petersburg, Russia
4
The Department of Physics, Saint Petersburg State University of Industrial Technologies and Design, 191186 Saint-Petersburg, Russia
*
Author to whom correspondence should be addressed.
Appl. Sci. 2020, 10(8), 2724; https://doi.org/10.3390/app10082724
Received: 12 March 2020 / Revised: 3 April 2020 / Accepted: 11 April 2020 / Published: 15 April 2020
(This article belongs to the Special Issue Terahertz Sensing)
We report results of galvanomagnetic and terahertz time-domain spectroscopy measurements on thin films of Bi 1 x Sb x on polyimide and mica substrates with various antimony concentrations (x from 0 to 15 %) and film thickness (70, 150 nm). The resistivity, Hall coefficient and magnetoresistivity of the films were measured experimentally in the magnetic field of 0.65 T at room temperature. Mobility and concentration of electrons and holes in the film plane were calculated using the transport coefficients. The terahertz time-domain spectroscopy is used to measure the complex conductivity and permittivity of Bi 1 x Sb x thin films on the dielectric substrates in the frequency range from 0.2 to 1 THz. The plasma frequency, relaxation time, DC conductivity and effective carrier mass were extracted from these data and evaluated as functions of the Sb concentration for different film thickness and substrate. We observed that the film magnetoresistivity decreases with increasing the Sb concentration and for most of the films the Hall coefficient is negative and depends on the external factors insignificantly. We show that the mobility of charge carriers weakly depends on Sb concentration, which confirms the assertion about the scattering of carriers on themselves and not on defects in the structure. It was revealed that film static and dynamic resistivity (conductivity) as well as dielectric permittivity depend on Sb content and the film thickness. The results may be used for development of various thermoelectric, electronic and optical devices, such as THz detectors or components which can control the properties of THz radiation. View Full-Text
Keywords: semimetals; thin films; bismuth-antimony; galvanomagnetic properties; terahertz time-domain spectroscopy; solid solutions semimetals; thin films; bismuth-antimony; galvanomagnetic properties; terahertz time-domain spectroscopy; solid solutions
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Zaitsev, A.D.; Demchenko, P.S.; Zykov, D.V.; Korotina, E.A.; Makarova, E.S.; Tkhorzhevskiy, I.L.; Tukmakova, A.S.; Kablukova, N.S.; Asach, A.V.; Novotelnova, A.V.; Khodzitsky, M.K. Optical and Galvanomagnetic Properties of Bi1-xSbx Thin Films in the Terahertz Frequency Range. Appl. Sci. 2020, 10, 2724.

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