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Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

1
National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, Jiangsu, China
2
Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing 210093, Jiangsu, China
*
Author to whom correspondence should be addressed.
Appl. Sci. 2020, 10(2), 639; https://doi.org/10.3390/app10020639
Received: 8 November 2019 / Revised: 10 January 2020 / Accepted: 10 January 2020 / Published: 16 January 2020
(This article belongs to the Section Materials)
Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we report the direct growth of antimonene on c-plane sapphire substrate while using molecular beam epitaxy (MBE). We explore the effect of growth temperature on antimonene formation and present a growth phase diagram of antimony. The effect of antimony sources (Sb2 or Sb4) and a competing mechanism between the two-dimensional (2D) and three-dimensional (3D) growth processes and the effects of adsorption and cracking of the source molecules are also discussed. This work offers a new method for growing antimonene and it provides ideas for promoting van der Waals epitaxy. View Full-Text
Keywords: antimonene; molecular beam epitaxy; effective adsorption; sapphire; two dimensional materials antimonene; molecular beam epitaxy; effective adsorption; sapphire; two dimensional materials
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Gu, M.; Li, C.; Ding, Y.; Zhang, K.; Xia, S.; Wang, Y.; Lu, M.-H.; Lu, H.; Chen, Y.-F. Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy. Appl. Sci. 2020, 10, 639.

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