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Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device
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Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device
 
 

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Journal: Metals, 2021
Volume: 11
Number: 1207

Article: Volatile Resistive Switching Characteristics of Pt/HfO2/TaOx/TiN Short-Term Memory Device
Authors: by Hojeong Ryu and Sungjun Kim
Link: https://www.mdpi.com/2075-4701/11/8/1207

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