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Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

1
School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
2
Department of Materials Science and Engineering, Da-Yeh University, Chunghwa 51591, Taiwan
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(8), 402; https://doi.org/10.3390/cryst9080402
Received: 31 May 2019 / Revised: 30 July 2019 / Accepted: 31 July 2019 / Published: 3 August 2019
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Abstract

Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used. View Full-Text
Keywords: heterojunction; silicon carbide; band gap; solar cell; crystalline silicon heterojunction; silicon carbide; band gap; solar cell; crystalline silicon
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Hsu, C.-H.; Zhang, X.-Y.; Zhao, M.J.; Lin, H.-J.; Zhu, W.-Z.; Lien, S.-Y. Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer. Crystals 2019, 9, 402.

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