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Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023, China
Authors to whom correspondence should be addressed.
Crystals 2019, 9(4), 204;
Received: 6 March 2019 / Revised: 3 April 2019 / Accepted: 9 April 2019 / Published: 12 April 2019
(This article belongs to the Special Issue Zinc Oxide Nanomaterials and Based Devices)
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Nitrogen-doped ZnO thin films were grown on a-plane Al2O3 by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy. View Full-Text
Keywords: molecular beam epitaxy; ZnO; dopant; defects molecular beam epitaxy; ZnO; dopant; defects

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Chen, X.; Zhang, Z.; Zhang, Y.; Yao, B.; Li, B.; Gong, Q. Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience. Crystals 2019, 9, 204.

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