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Crystals 2019, 9(3), 155;

Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram

1,2,†, 2,3,†, 2, 2, 4, 1,5,*, 2,3,* and 2,3,*
School of Metallurgical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China
State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China
Center for Excellence in Regional Atmospheric Environment, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021, China
Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
Metallurgical Engineering and Technology Research Center of Shaanxi Province, Xi’an 710055, China
Authors to whom correspondence should be addressed.
These authors contributed equally to this work.
Received: 13 February 2019 / Revised: 11 March 2019 / Accepted: 12 March 2019 / Published: 15 March 2019
(This article belongs to the Special Issue Structural and Optical Properties of Nanostructured Metal Oxides)
PDF [4068 KB, uploaded 15 March 2019]


Currently, it is challenging to develop new catalysts for semiconductor nanowires (NWs) growth in a complementary-metal-oxide-semiconductor (CMOS) compatible manner via a vapor-liquid-solid (VLS) mechanism. In this study, chemically synthesized Cu2O nano cubes are adopted as the catalyst for single crystalline β-Ga2O3 NWs growth in chemical vapor deposition. The growth temperature is optimized to be 750 to 800 °C. The NW diameter is controlled by tuning the sizes of Cu2O cubes in the 20 to 100 nm range with a bandgap of ~4.85 eV as measured by ultraviolet-visible absorption spectroscopy. More importantly, the catalyst tip is found to be Cu5As2, which is distinguished from those Au-catalyzed Au-Ga alloys. After a comprehensive phase diagram investigation, the β-Ga2O3 NWs are proposed to be grown by the ternary phase of Cu-As-Ga diffusing Ga into the growth frontier of the NW, where Ga react with residual oxygen to form the NWs. Afterward, Ga diminishes after growth since Ga would be the smallest component in the ternary alloy. All these results show the importance of the catalyst choice for CMOS compatible NW growth and also the potency of the ternary phase catalyst growth mode in other semiconductor NWs synthesis. View Full-Text
Keywords: Ga2O3 nanowires; Cu2O cubes; Cu5As2; Cu-As-Ga ternary phase diagram; chemical vapor deposition Ga2O3 nanowires; Cu2O cubes; Cu5As2; Cu-As-Ga ternary phase diagram; chemical vapor deposition

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Wang, H.; Wang, Y.; Gong, S.; Zhou, X.; Yang, Z.; Yang, J.; Han, N.; Chen, Y. Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram. Crystals 2019, 9, 155.

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