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Open AccessArticle

Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

1
Institute of Materials Engineering, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1A, 40-500 Chorzów, Poland
2
Nordic Hysitron Laboratory, Department of Chemistry & Materials Science, School of Chemical Engineering, Aalto University, Espoo, 00076 Aalto, Finland
3
Institute of Physics, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1A, 40-500 Chorzów, Poland
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(12), 651; https://doi.org/10.3390/cryst9120651
Received: 26 October 2019 / Revised: 4 December 2019 / Accepted: 5 December 2019 / Published: 7 December 2019
(This article belongs to the Special Issue Dislocations in Heterostructures)
In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn- and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration. View Full-Text
Keywords: semiconductors; nanoindentation; incipient plasticity; dislocation; phase transformation semiconductors; nanoindentation; incipient plasticity; dislocation; phase transformation
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MDPI and ACS Style

Chrobak, D.; Trębala, M.; Chrobak, A.; Nowak, R. Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal. Crystals 2019, 9, 651.

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