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Open AccessArticle

Control of Organic Superconducting Field-Effect Transistor by Cooling Rate

1
Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science, Okazaki, Aichi 444-8585, Japan
2
RIKEN, Wako, Saitama 351-0198, Japan
*
Authors to whom correspondence should be addressed.
Crystals 2019, 9(11), 605; https://doi.org/10.3390/cryst9110605
Received: 12 October 2019 / Revised: 6 November 2019 / Accepted: 13 November 2019 / Published: 19 November 2019
(This article belongs to the Section Inorganic Crystalline Materials)
A new superconducting field-effect transistor (FET) in the vicinity of bandwidth-controlled Mott transition was developed using molecular strongly correlated system κ-(BEDT-TTF)2Cu[N(CN)2]Br [BEDT-TTF = bis(ethylenedithio)tetrathiafulvalene] laminated on CaF2 substrate. This device exhibited significant cooling-rate dependence of resistance below about 80 K, associated with glass transition of terminal ethylene group of BEDT-TTF molecule, where more rapid cooling through glass transition temperature leads to the decrease in bandwidth. We demonstrated that the FET properties such as ON/OFF ratio and polarity can be controlled by utilizing cooling rate. Our result may give a novel insight into the design of molecule-based functional devices. View Full-Text
Keywords: molecular conductor; strongly correlated electron system; superconductivity; Mott insulator; field-effect transistor molecular conductor; strongly correlated electron system; superconductivity; Mott insulator; field-effect transistor
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MDPI and ACS Style

Kawaguchi, G.; Yamamoto, H.M. Control of Organic Superconducting Field-Effect Transistor by Cooling Rate. Crystals 2019, 9, 605.

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