Tanner, B.K.; Allen, D.; Wittge, J.; Danilewsky, A.N.; Garagorri, J.; Gorostegui-Colinas, E.; Elizalde, M.R.; McNally, P.J.
Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon. Crystals 2017, 7, 347.
https://doi.org/10.3390/cryst7110347
AMA Style
Tanner BK, Allen D, Wittge J, Danilewsky AN, Garagorri J, Gorostegui-Colinas E, Elizalde MR, McNally PJ.
Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon. Crystals. 2017; 7(11):347.
https://doi.org/10.3390/cryst7110347
Chicago/Turabian Style
Tanner, Brian K., David Allen, Jochen Wittge, Andreas N. Danilewsky, Jorge Garagorri, Eider Gorostegui-Colinas, M. Reyes Elizalde, and Patrick J. McNally.
2017. "Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon" Crystals 7, no. 11: 347.
https://doi.org/10.3390/cryst7110347
APA Style
Tanner, B. K., Allen, D., Wittge, J., Danilewsky, A. N., Garagorri, J., Gorostegui-Colinas, E., Elizalde, M. R., & McNally, P. J.
(2017). Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon. Crystals, 7(11), 347.
https://doi.org/10.3390/cryst7110347