Order Article Reprints

Wei Y, Meng R, Huang Y, Huo G, Wu H, Chen J, Guo G, Peng Y, Zhu N, Su J. Influences of Polishing Slurry Components on Material Removal and Surface Morphology of 4H-SiC C-Face Based on Fenton Reaction CMP. Crystals. 2026; 16(3):179. https://doi.org/10.3390/cryst16030179

Wei, Ying, Ruhao Meng, Yongqi Huang, Guoyan Huo, Haitao Wu, Jiapeng Chen, Guizhong Guo, Yanan Peng, Nannan Zhu, and Jianxiu Su. 2026. "Influences of Polishing Slurry Components on Material Removal and Surface Morphology of 4H-SiC C-Face Based on Fenton Reaction CMP" Crystals 16, no. 3: 179. https://doi.org/10.3390/cryst16030179

Wei, Y., Meng, R., Huang, Y., Huo, G., Wu, H., Chen, J., Guo, G., Peng, Y., Zhu, N., & Su, J. (2026). Influences of Polishing Slurry Components on Material Removal and Surface Morphology of 4H-SiC C-Face Based on Fenton Reaction CMP. Crystals, 16(3), 179. https://doi.org/10.3390/cryst16030179