Le, B.-P.; Chen, J.-C.; Hu, C.; Lin, W.-J.; Tu, C.-C.; Chen, L.-C.
Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity. Crystals 2025, 15, 477.
https://doi.org/10.3390/cryst15050477
AMA Style
Le B-P, Chen J-C, Hu C, Lin W-J, Tu C-C, Chen L-C.
Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity. Crystals. 2025; 15(5):477.
https://doi.org/10.3390/cryst15050477
Chicago/Turabian Style
Le, Ba-Phuoc, Jyh-Chen Chen, Chieh Hu, Wei-Jie Lin, Chun-Chin Tu, and Liang-Chin Chen.
2025. "Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity" Crystals 15, no. 5: 477.
https://doi.org/10.3390/cryst15050477
APA Style
Le, B.-P., Chen, J.-C., Hu, C., Lin, W.-J., Tu, C.-C., & Chen, L.-C.
(2025). Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity. Crystals, 15(5), 477.
https://doi.org/10.3390/cryst15050477