Order Article Reprints

Wang B, Yang J, Zhao D, Zhang Y, Zhang Z, Liang F, Chen P, Liu Z. The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length. Crystals. 2022; 12(8):1131. https://doi.org/10.3390/cryst12081131

Wang, Baibin, Jing Yang, Degang Zhao, Yuheng Zhang, Zhenzhuo Zhang, Feng Liang, Ping Chen, and Zongshun Liu. 2022. "The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length" Crystals 12, no. 8: 1131. https://doi.org/10.3390/cryst12081131

Wang, B., Yang, J., Zhao, D., Zhang, Y., Zhang, Z., Liang, F., Chen, P., & Liu, Z. (2022). The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length. Crystals, 12(8), 1131. https://doi.org/10.3390/cryst12081131