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Journal: CrystalsVolume: 12Number: 171
Article: The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation
  • Authors:
  • Yuhao Ben1,2,
  • Feng Liang1,* and
  • Degang Zhao1,3,*
  • et al.
Link: https://www.mdpi.com/2073-4352/12/2/171

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