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Journal: Crystals, 2022
Volume: 12
Number: 171
171
Article: The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation
Authors: by Yuhao Ben, Feng Liang, Degang Zhao, Jing Yang, Ping Chen and Zongshun Liu
Link: https://www.mdpi.com/2073-4352/12/2/171

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