Lin, P.-T.; Chang, J.-W.; Chang, S.-R.; Li, Z.-K.; Chen, W.-Z.; Huang, J.-H.; Ji, Y.-Z.; Hsueh, W.-J.; Huang, C.-Y.
A Stable and Efficient Pt/n-Type Ge Schottky Contact That Uses Low-Cost Carbon Paste Interlayers. Crystals 2021, 11, 259.
https://doi.org/10.3390/cryst11030259
AMA Style
Lin P-T, Chang J-W, Chang S-R, Li Z-K, Chen W-Z, Huang J-H, Ji Y-Z, Hsueh W-J, Huang C-Y.
A Stable and Efficient Pt/n-Type Ge Schottky Contact That Uses Low-Cost Carbon Paste Interlayers. Crystals. 2021; 11(3):259.
https://doi.org/10.3390/cryst11030259
Chicago/Turabian Style
Lin, Pei-Te, Jia-Wei Chang, Syuan-Ruei Chang, Zhong-Kai Li, Wei-Zhi Chen, Jui-Hsuan Huang, Yu-Zhen Ji, Wen-Jeng Hsueh, and Chun-Ying Huang.
2021. "A Stable and Efficient Pt/n-Type Ge Schottky Contact That Uses Low-Cost Carbon Paste Interlayers" Crystals 11, no. 3: 259.
https://doi.org/10.3390/cryst11030259
APA Style
Lin, P.-T., Chang, J.-W., Chang, S.-R., Li, Z.-K., Chen, W.-Z., Huang, J.-H., Ji, Y.-Z., Hsueh, W.-J., & Huang, C.-Y.
(2021). A Stable and Efficient Pt/n-Type Ge Schottky Contact That Uses Low-Cost Carbon Paste Interlayers. Crystals, 11(3), 259.
https://doi.org/10.3390/cryst11030259