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Effect of Deposition Power on the Thermoelectric Performance of Bismuth Telluride Prepared by RF Sputtering

1
Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
2
College of Electronic and Optical Engineering, Nanjing University of Posts and Communication, Nanjing 210003, China
3
Department of Physics, Hanyang University, Seoul 04763, Korea
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(7), 552; https://doi.org/10.3390/cryst10070552
Received: 13 June 2020 / Revised: 24 June 2020 / Accepted: 26 June 2020 / Published: 28 June 2020
(This article belongs to the Section Hybrid and Composite Crystalline Materials)
In this work, we present a simple method to improve the thermoelectric performance of the RF sputtered bismuth telluride films by raising the power of deposition. The as-deposited samples synthesized under different powers were investigated and compared. It shows that the films prepared under relatively higher power conditions exhibit much higher electrical conductivity to result in a greater power factor accompanied with a minor drop in the Seebeck coefficients. A relationship is established between the improvement in thermoelectric performance and the decrease in crystallinity, which might also reduce the thermal conductivity. A maximum power factor of 5.65 × 10−4 W·m−1·K−2 at 470 K is obtained for the sample deposited under 50 W with its Seebeck coefficient being −105 μV/K. The temperature-dependent behaviors of the samples are also looked into and discussed. This work might offer an in-situ and cost-effective approach to improve the performance of thermoelectric materials. View Full-Text
Keywords: bismuth telluride; thermoelectric material; RF sputtering bismuth telluride; thermoelectric material; RF sputtering
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MDPI and ACS Style

Zang, K.-Y.; Hu, E.-T.; Wang, Z.-Y.; Tu, H.-T.; Zheng, Y.-X.; Wang, S.-Y.; Zhao, H.-B.; Yang, Y.-M.; Lee, Y.-P.; Chen, L.-Y. Effect of Deposition Power on the Thermoelectric Performance of Bismuth Telluride Prepared by RF Sputtering. Crystals 2020, 10, 552.

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