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Effect of Deposition Power on the Thermoelectric Performance of Bismuth Telluride Prepared by RF Sputtering

Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
College of Electronic and Optical Engineering, Nanjing University of Posts and Communication, Nanjing 210003, China
Department of Physics, Hanyang University, Seoul 04763, Korea
Author to whom correspondence should be addressed.
Crystals 2020, 10(7), 552;
Received: 13 June 2020 / Revised: 24 June 2020 / Accepted: 26 June 2020 / Published: 28 June 2020
(This article belongs to the Section Hybrid and Composite Crystalline Materials)
In this work, we present a simple method to improve the thermoelectric performance of the RF sputtered bismuth telluride films by raising the power of deposition. The as-deposited samples synthesized under different powers were investigated and compared. It shows that the films prepared under relatively higher power conditions exhibit much higher electrical conductivity to result in a greater power factor accompanied with a minor drop in the Seebeck coefficients. A relationship is established between the improvement in thermoelectric performance and the decrease in crystallinity, which might also reduce the thermal conductivity. A maximum power factor of 5.65 × 10−4 W·m−1·K−2 at 470 K is obtained for the sample deposited under 50 W with its Seebeck coefficient being −105 μV/K. The temperature-dependent behaviors of the samples are also looked into and discussed. This work might offer an in-situ and cost-effective approach to improve the performance of thermoelectric materials. View Full-Text
Keywords: bismuth telluride; thermoelectric material; RF sputtering bismuth telluride; thermoelectric material; RF sputtering
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MDPI and ACS Style

Zang, K.-Y.; Hu, E.-T.; Wang, Z.-Y.; Tu, H.-T.; Zheng, Y.-X.; Wang, S.-Y.; Zhao, H.-B.; Yang, Y.-M.; Lee, Y.-P.; Chen, L.-Y. Effect of Deposition Power on the Thermoelectric Performance of Bismuth Telluride Prepared by RF Sputtering. Crystals 2020, 10, 552.

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