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Open AccessArticle

Infrared Optical Conductivity of Bulk Bi2Te2Se

1
Moscow Institute of Physics and Technology, National Research University, 141701 Dolgoprudny, Moscow Region, Russia
2
1. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
3
Institute of Materials Science, Technische Universität Darmstadt, Jovanka-Bontschits-Str. 2, 64287 Darmstadt, Germany
4
P. N. Lebedev Physical Institute of the RAS, 119991 Moscow, Russia
*
Authors to whom correspondence should be addressed.
Crystals 2020, 10(7), 553; https://doi.org/10.3390/cryst10070553
Received: 8 June 2020 / Revised: 21 June 2020 / Accepted: 24 June 2020 / Published: 28 June 2020
(This article belongs to the Special Issue Advances in Topological Materials)
Mid- and near-infrared measurements reveal that the optical conductivity of the three-dimensional topological insulator, Bi2Te2Se, is dominated by bulk carriers and shows a linear-in-frequency increase at 0.5 to 0.8 eV. This linearity might be interpreted as a signature of three-dimensional (bulk) Dirac bands; however, band-structure calculations show that transitions between bands with complex dispersion contribute instead to the inter-band optical conductivity at these frequencies and, hence, the observed linearity is accidental. These results warn against the oversimplified interpretations of optical-conductivity measurements in different Dirac materials. View Full-Text
Keywords: topological insulators; optical conductivity; Dirac materials topological insulators; optical conductivity; Dirac materials
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Zhukova, E.S.; Zhang, H.; Martovitskiy, V.P.; Selivanov, Y.G.; Gorshunov, B.P.; Dressel, M. Infrared Optical Conductivity of Bulk Bi2Te2Se. Crystals 2020, 10, 553.

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