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Unseeded Crystal Growth of (100)-Oriented Grain-Boundary-Free Si Thin-Film by a Single Scan of the CW-Laser Lateral Crystallization of a-Si on Insulator

1
Sasaki Consulting, Kawasaki 212-0012, Japan
2
Division of Materials Science, NAIST, Ikoma 630-0192, Japan
3
V-Technology, Yokohama 240-0005, Japan
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(5), 405; https://doi.org/10.3390/cryst10050405
Received: 14 April 2020 / Revised: 3 May 2020 / Accepted: 12 May 2020 / Published: 17 May 2020
(This article belongs to the Special Issue Growth and Evaluation of Crystalline Silicon (Volume II))
Laser crystallization of a-Si film on insulating substrate is a promising technology to fabricate three-dimensional integrations (3D ICs), flat panel displays (FPDs), or flexible electronics, because the crystallization can be performed on room temperature substrate to avoid damage to the underlying devices or supporting plane. Orientation-controlled grain-boundary-free films are required to improve the uniformity in electrical characteristics of field-effect-transistors (FETs)fabricated in those films. This paper describes the recently found simple method to obtain {100}-oriented grain-boundary-free Si thin-films stably, by using a single scan of continuous-wave (CW)-laser lateral crystallization of a-Si with a highly top-flat line beam with 532 nm wavelength at room temperature in air. It was difficult to control crystal orientations in the grain-boundary-free film crystallized by the artificial modulation of solid-liquid interface, and any other trial to obtain preferential surface orientation with multiple irradiations resulted in grain boundaries. The self-organized growth of the {100}-oriented grain-boundary-free films were realized by satisfying the following conditions: (1) highly uniform top-flat line beam, (2) SiO2 cap, (3) low laser power density in the vicinity of the lateral growth threshold, and (4) single scan crystallization. Higher scan velocity makes the process window wide for the {100}-oriented grain-boundary-free film. This crystallization is very simple, because it is performed by a single unseeded scan with a line beam at room temperature substrate in air. View Full-Text
Keywords: laser crystallization; crystallographic orientation; grain boundary; silicon thin-film; crystal growth; continuous-wave laser; line beam; top-flat beam profile laser crystallization; crystallographic orientation; grain boundary; silicon thin-film; crystal growth; continuous-wave laser; line beam; top-flat beam profile
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MDPI and ACS Style

Sasaki, N.; Arif, M.; Uraoka, Y.; Gotoh, J.; Sugimoto, S. Unseeded Crystal Growth of (100)-Oriented Grain-Boundary-Free Si Thin-Film by a Single Scan of the CW-Laser Lateral Crystallization of a-Si on Insulator. Crystals 2020, 10, 405.

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