The first step for photocatalytic processes is light absorption, thus UV-Visible Diffuse Reflectance Spectroscopy (UV-VIS DRS) was used to measure the optical properties for all samples in 200–800 nm range. The UV-VIS DRS properties directly depend on band gap and electronic energy structure and they affect the photocatalytic activity too [
10,
11,
18]. Changes of light absorption properties with composition were observed in mixed oxide samples in present work. In samples containing the Cu
2O/In
2O
3 pair, absorption spectra (
Figure 4) clearly change with composition. Lines corresponding to binary metal oxides are plotted for comparison. Whether HEM or CP preparation technique is adopted, the increase in Cu/In ratio induces a general redshift in absorption spectra and a corresponding significant absorption at wavelengths above 500 nm, where fundamental transition of Cu
2O is [
19]. While the absorption tail observed in CP prepared samples (
Figure 4a) can be attributed mainly to scattering phenomena, due to aggregation of small particle size, the reduction in size for Cu
2O component is at the origin of the blueshift observed in spectra of HEM prepared samples (
Figure 4b). Such a shift and the marked absorption tails observed at long wavelengths for samples prepared using C-Cu
2O are instead attributed to the not negligible CuO presence in commercial Cu
2O, because CuO fundamental absorption occurs at lower energy [
19].
Absorption spectra recorded for samples containing the Cu
2O/Fe
2O
3 pair are shown in
Figure 5, together with lines of binary metal oxides for comparison. Here, the increase in Cu/Fe is found to change absorption spectra for both preparation techniques, but in a different way accounting for absorption features of the two components at wavelengths longer than 500 nm [
19,
26]. In CP prepared samples (
Figure 5a) the component oxides present fundamental absorption region different enough to observe a linear trend with increasing Cu/Fe ratio and thus a slight blueshift and increasing similarity towards the Cu
2O spectrum. This feature has been attributed to typical α-Fe
2O
3 spectra characteristics which appear over 550 nm [
26,
55], well over than S-Cu
2O fundamental absorption [
19], thus, the addition of this specific component did not result in a redshift. On the contrary, in samples prepared by HEM using C-Cu
2O (
Figure 5b), spectra of precursor components (C-Cu
2O and C-Fe
2O
3) show a similar fundamental absorption region and differences only in absorption intensity. Hence, an increase in Cu/Fe ratio corresponds to a higher absorption at longer wavelengths, which has been mainly attributed to CuO impurities in C-Cu
2O precursor.
However, DRS absorption measurements demonstrated that prepared nanocomposites are photoactive in almost the whole UV-Visible range in function of their composition. In particular, the introduction of Cu2O has given In2O3 a better response in the VIS-region, while the interaction between Cu2O and α-Fe2O3 has induced less predictable effects because of similar fundamental absorption. Studying these features is crucial because they are involved in enhancement of solar light harvesting properties for application in photocatalysis. Anyway, in both pairs, properties are very sensitive to nanocomposites preparation procedures, and thermal treatments.
Band-Gap Evaluation by UV-Visible Spectroscopy
The optical energy gap (E
g,opt) is a fundamental property in semiconductors and it equals the minimum energy required to excite an electron from VB to CB by means of light absorption. This energy gap can be directly measured through UV-Visible spectroscopy, if a single fundamental absorption is clearly distinguished. In case this is not possible or solid-state samples are studied, as in the present work, a simple and widely adopted data elaboration method can be used, which is described in detail elsewhere [
58,
59]. Briefly, the Kubelka–Munk function (K–M), F(R), is calculated starting from the experimental reflectance spectrum and is related to linear absorption coefficient α and to E
g,opt through a power law (1) describing the optical absorption strength in function of photon energy.
The exponent
n assumes different values depending on the type of electronic transition. Provided there is some knowledge about the occurring electronic transition, the plot of product (2) versus radiation energy, (hν), shows up a linear trend in the region corresponding to fundamental absorption and energy gap [
58,
59].
The linear least square fitting in this region allows for the extraction of the E
g,opt value as the intersection of straight line with the energy axis, according to the Tauc Plot extrapolation procedure. It can be applied to pure or lightly doped semiconductors, but it does not produce reliable results if fundamental absorption edges are not separable or if a simple combination of individual optical gaps cannot be assumed, as in highly doped semiconductors or in nanocomposites. In the present work, mixed oxide samples fall in the second case, therefore E
g,opt value was measured only for all single metal oxide samples. The linear regression operations have been optimized by merging two criteria: (a) maximization of correlation coefficient
R2, ensuring a better description by linear model and (b) consideration of a calculation range containing a minimum of 20 data points, to give procedure a statistical validation. Matching those two criteria allows for a good extrapolation result. Tauc Plots for different single metal oxide samples are shown in
Figure 6.
In the case of Cu
2O, absorption spectra are reported as light blue traces in both
Figure 4 and
Figure 5 and large difference do appear between C-Cu
2O and S-Cu
2O samples. Absorption in the commercial sample extends up to 600 nm, while the S-Cu
2O sample shows a significant absorption in the UV region, decreasing significantly over 500 nm, where some absorption is guaranteed by a pronounced tail extending at longer wavelengths. The extended presence of CuO (30%) in the commercial precursor and particle size cause the differences.
Figure 6a shows Tauc Plots for Cu-oxide samples. These show a steeper rise for S-Cu
2O sample and two very different values for estimated E
g,opt energies are observed, and both have been calculated assuming a direct allowed electronic transition occurs between VBM and CBM [
19,
40], and
n coefficient is, thus, set equal to 0.5. Values within 2.0 and 2.2 eV are generally attested in literature for Cu
2O [
40], though quantum size effect is widely recognized able to markedly influence its energy gap. In this work, E
g,opt values equal to 2.047 and 2.495 eV for C-Cu
2O and S-Cu
2O sample, respectively, are found in accordance with literature [
20,
36,
39]. This is also true for the synthesized sample, where a UV-shifted value is justified by quantum size confinement and where a pronounced tail, recorded before gap and reflected in absorption spectrum, is attributed to crystalline disorder and broad size dispersion.
Absorption spectra for In
2O
3 samples are shown in
Figure 4 as red traces which do not show large differences at a first examination: both commercial and synthesized samples absorb radiation mainly in the near UV range (below 450 nm). Tauc Plots (
Figure 6b) enhance features previously not evident, such as a large tail in the S-In
2O
3 trace or its steeper rise with respect to the C-In
2O
3. Extracted E
g,opt values are equal to 3.091 eV in C-In
2O
3 and to 3.610 eV in the S-In
2O
3 sample. The determination was performed considering that a direct allowed electronic transition occurs, as for recent studies [
25,
54]. Though band gap nature and electronic structure for In
2O
3 are somewhat controversial, a fundamental band gap ranging from 2.6 to 2.9 eV is now commonly accepted [
25], and it slightly differs from the optical gap, attested within 2.3 and 3.8 eV [
30,
34], therefore values measured in the present work result in accordance with literature. The 0.6 eV difference observed has been deemed coming from the preparation technique. In this case, its contribution affects band structure mainly through the introduction of lattice defects, especially oxygen vacancies, and creation of mid-gap states, a phenomenon which is commonly found in
n-type wide gap semiconductor oxides [
54], the effect appears more pronounced in the S-In
2O
3 sample, where the trace shows a large tail extending towards low energies.
Both the Fe
2O
3 samples exhibit good light harvesting properties in the whole UV-Visible region, with significant absorption up to 600 nm, higher in S-Fe
2O
3 sample, as shown by analysis of red traces in
Figure 5. Four different regions are commonly identified in absorption spectra [
31] and the fundamental band gap is recognized at 2.2 eV [
26,
55], with discussion whether its direct or indirect nature and thus its coincidence with the optical band gap. Furthermore, complication can arise in E
g,opt determination because it usually merges with an exciton absorption, which is produced by an indirect transition between 3d–3d orbitals and dominates spectra over 550 nm, giving hematite its typical red color [
55]. The exciton is clearly observed in Tauc Plots as the low intensity shoulder with onset at 2.1 eV (
Figure 6c). Because of this indirect nature, absorption below 2.1–2.2 eV is considered not able to produce useful separated electron-hole pairs, suffering from very fast recombination, a widely recognized drawback in α-Fe
2O
3 [
26,
55]. Therefore, to study photocatalysis-useful optical absorption, a direct allowed transition has been assumed for Tauc Plots. Extracted E
g,opt equal 2.772 and 2.875 eV for S-Fe
2O
3 and C-Fe
2O
3 sample, respectively. Although these values result unusually larger than the commonly accepted and measured ones [
31,
32,
36,
39], such a discrepancy can be explained by peculiar interacting electronic levels in iron atoms and presence of lattice defective particles. All these elements can lead to mixing between the standard direct gap and higher energy features (Ligand to Metal Charge Transfer (LMCT) processes occurring at 2.9–3.1 eV) [
55]. Aggregation of very small particles towards polycrystalline clusters formation was cited able to enhance this mixing and can be also identified as the source for the large tailing trend in S-Fe
2O
3 trace.
Table 4 lists single metal oxide samples, with indication of optical energy gap extracted values and corresponding absorption wavelength. Except for iron oxide, S-samples show higher optical energy gaps than C-ones. Moreover, S-samples reveal a tailing trend more pronounced than in C-samples, indicative of broader size dispersion and lower average size (10–50 nm).