Zhou, Y.; Du, F.; Song, Q.; Tang, X.; Yuan, H.; Han, C.; Zhang, C.; Zhang, Y.
A High-Temperature Stable Ohmic Contact Process on Lightly Doped n-Type 4H-SiC Based on a W/C Multilayer Structure. Micromachines 2025, 16, 1408.
https://doi.org/10.3390/mi16121408
AMA Style
Zhou Y, Du F, Song Q, Tang X, Yuan H, Han C, Zhang C, Zhang Y.
A High-Temperature Stable Ohmic Contact Process on Lightly Doped n-Type 4H-SiC Based on a W/C Multilayer Structure. Micromachines. 2025; 16(12):1408.
https://doi.org/10.3390/mi16121408
Chicago/Turabian Style
Zhou, Yu, Fengyu Du, Qingwen Song, Xiaoyan Tang, Hao Yuan, Chao Han, Chunfu Zhang, and Yuming Zhang.
2025. "A High-Temperature Stable Ohmic Contact Process on Lightly Doped n-Type 4H-SiC Based on a W/C Multilayer Structure" Micromachines 16, no. 12: 1408.
https://doi.org/10.3390/mi16121408
APA Style
Zhou, Y., Du, F., Song, Q., Tang, X., Yuan, H., Han, C., Zhang, C., & Zhang, Y.
(2025). A High-Temperature Stable Ohmic Contact Process on Lightly Doped n-Type 4H-SiC Based on a W/C Multilayer Structure. Micromachines, 16(12), 1408.
https://doi.org/10.3390/mi16121408
