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Article

Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification

1
School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China
2
School of Engineering, University of Edinburgh, Edinburgh EH9 3FF, UK
*
Author to whom correspondence should be addressed.
Micromachines 2018, 9(8), 390; https://doi.org/10.3390/mi9080390
Submission received: 4 July 2018 / Revised: 29 July 2018 / Accepted: 1 August 2018 / Published: 6 August 2018

Abstract

This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floating metallic membrane. Comparing the proposed high-capacitance-ratio MEMS switch with the ones in available literature, an acceptable insertion loss insulation, acceptable response time and high capacitance ratio (383.8) are achieved.
Keywords: RF MEMS; high-capacitance-ratio; metal-insulator-metal RF MEMS; high-capacitance-ratio; metal-insulator-metal

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MDPI and ACS Style

Han, K.; Guo, X.; Smith, S.; Deng, Z.; Li, W. Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification. Micromachines 2018, 9, 390. https://doi.org/10.3390/mi9080390

AMA Style

Han K, Guo X, Smith S, Deng Z, Li W. Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification. Micromachines. 2018; 9(8):390. https://doi.org/10.3390/mi9080390

Chicago/Turabian Style

Han, Ke, Xubing Guo, Stewart Smith, Zhongliang Deng, and Wuyu Li. 2018. "Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification" Micromachines 9, no. 8: 390. https://doi.org/10.3390/mi9080390

APA Style

Han, K., Guo, X., Smith, S., Deng, Z., & Li, W. (2018). Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification. Micromachines, 9(8), 390. https://doi.org/10.3390/mi9080390

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