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Journal: Micromachines, 2018
Volume: 9
Number: 658
Article:
Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices
Authors:
by
Huolin Huang, Feiyu Li, Zhonghao Sun and Yaqing Cao
Link:
https://www.mdpi.com/2072-666X/9/12/658
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