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Journal: Micromachines, 2018
Volume: 9
Number: 657

Article: Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
Authors: by Zhaonian Yang, Yuan Yang, Ningmei Yu and Juin J. Liou
Link: https://www.mdpi.com/2072-666X/9/12/657

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