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Journal: Micromachines, 2018
Volume: 9
Number: 610

Article: Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
Authors: by Yifei Huang, Ying Wang, Xiaofei Kuang, Wenju Wang, Jianxiang Tang and Youlei Sun
Link: https://www.mdpi.com/2072-666X/9/12/610

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