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Journal: Micromachines, 2018
Volume: 9
Number: 581
581
Article: A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications
Authors: by Myeongsun Kim, Jongmin Ha, Ikhyeon Kwon, Jae-Hee Han, Seongjae Cho and Il Hwan Cho
Link: https://www.mdpi.com/2072-666X/9/11/581

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