Study of the Orbital Circular Cutting in Quartz Wafers Using Electrochemical Discharge Machining with Micro-Electrodes
Abstract
1. Introduction
2. Materials and Methods
2.1. Experimental Setup
2.2. Materials
2.3. Experimental Procedures
3. Results and Discussion
3.1. Effects of OCC and CPC on Quartz Wafer Cutting
3.2. Effects of Working Voltage on Slot Geometry Cutting
3.3. Effects of Pulse Duration on Slot Geometry Cutting
3.4. Effects of Z-Axis Feed Rate on Slot Geometry Cutting
3.5. Effects of Duty Factor on Slot Geometry Cutting
3.6. Validation of Optimized Machining Parameters for Circular Quartz Specimen Cutting
4. Conclusions
- Compared with CPC, OCC significantly improved the machining efficiency; the time required to fabricate an 8 mm diameter circular quartz specimen was reduced by approximately four times, while material loss was reduced by nearly twofold.
- During the OCC of quartz wafers, increasing the working voltage promoted the formation of a thicker and denser insulating gas film around the electrode, resulting in higher discharge energy. Consequently, both slot width and slot depth increased with increasing working voltage.
- Increasing the pulse duration led to an increase in slot width. However, the longer pulse off time associated with a larger pulse duration promoted the lateral diffusion of the insulating gas film from the electrode tip toward the sidewall, reducing the stability of gas film formation at the electrode tip. As a result, the downward discharge efficiency decreased, leading to a reduction in slot depth.
- Both slot width and slot depth decreased with increasing Z-axis feed rate. A higher feed rate reduced the formation time of the insulating gas film and limited discharge energy generation. However, when the feed rate was reduced to 1/6 μm/s, the prolonged gas film formation intensified discharge energy, resulting in noticeable etching marks on the slot bottom.
- Increasing the duty factor enhanced the discharge energy during ECDM, thereby increasing both slot width and slot depth. When the duty factor reached 50%, a stable insulating gas film was established, producing a smoother and flatter slot bottom morphology.
- The optimal machining parameters for quartz wafer cutting were identified as a working voltage of 48 V, a pulse duration of 10 μs, a Z-axis feed rate of 1/5 μm/s, and a duty factor of 50%. Under these conditions, a circular quartz specimen with a diameter of 8.069 mm was successfully fabricated with good dimensional accuracy and edge quality.
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
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| Experimental Parameters | Present Parameters |
|---|---|
| parity of helical electrode | (—) |
| Helical electrode size (µm) | 150 |
| Working voltage (V) | 48 |
| Pulse duration (µs) | 10 |
| duty factor (%) | 50 |
| electrolyte concentration and volumetric ratio (M) | 5M KOH:C2H5OH = 9:1 |
| Experimental Parameters | Present Parameters |
|---|---|
| Working voltages (V) | 40, 42, 44, 46, 48 |
| Pulse durations (µs) | 10, 20, 30, 40, 50 |
| Feed rates of Z-axis (µm/s) | 1/2, 1/3, 1/4, 1/5, 1/6 |
| duty factors (%) | 20, 30, 40, 50, 60 |
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Wang, A.-C.; Hung, J.-C.; Tsai, Y.-L.; Tsui, H.-P. Study of the Orbital Circular Cutting in Quartz Wafers Using Electrochemical Discharge Machining with Micro-Electrodes. Micromachines 2026, 17, 832. https://doi.org/10.3390/mi17070832
Wang A-C, Hung J-C, Tsai Y-L, Tsui H-P. Study of the Orbital Circular Cutting in Quartz Wafers Using Electrochemical Discharge Machining with Micro-Electrodes. Micromachines. 2026; 17(7):832. https://doi.org/10.3390/mi17070832
Chicago/Turabian StyleWang, A-Cheng, Jung-Chou Hung, Yu-Lun Tsai, and Hai-Ping Tsui. 2026. "Study of the Orbital Circular Cutting in Quartz Wafers Using Electrochemical Discharge Machining with Micro-Electrodes" Micromachines 17, no. 7: 832. https://doi.org/10.3390/mi17070832
APA StyleWang, A.-C., Hung, J.-C., Tsai, Y.-L., & Tsui, H.-P. (2026). Study of the Orbital Circular Cutting in Quartz Wafers Using Electrochemical Discharge Machining with Micro-Electrodes. Micromachines, 17(7), 832. https://doi.org/10.3390/mi17070832

