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Journal: Micromachines, 2026
Volume: 17
Number: 233
233
Article: 4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications
Authors: by Changhao Chen, Yang Liu, Xiaowei Zhou, Peixian Li, Yongfeng Zhang, Bo Yang, Zili Yang and Junchun Bai
Link: https://www.mdpi.com/2072-666X/17/2/233

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