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Journal: Micromachines, 2025
Volume: 16
Number: 687

Article: Effect of Dual Al2O3 MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT
Authors: by Yuan Li, Yong Huang, Jing Li, Huiqing Sun and Zhiyou Guo
Link: https://www.mdpi.com/2072-666X/16/6/687

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