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Journal: Micromachines, 2025
Volume: 16
Number: 452
452
Article: Investigation of Channel Mobility Enhancement Techniques Using Si/SiGe/GeSn Materials in Orthogonally Oriented Selective Buried Triple Gate Vertical Power MOSFET: Design and Performance Analysis
Authors: by M. Ejaz Aslam Lodhi, Abdul Quaiyum Ansari, Sajad A. Loan, Shabana Urooj and Nidal Nasser
Link: https://www.mdpi.com/2072-666X/16/4/452

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