Boccarossa, M.; Melnyk, K.; Renz, A.B.; Gammon, P.M.; Kotagama, V.; Shah, V.A.; Maresca, L.; Irace, A.; Antoniou, M.
A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations. Micromachines 2025, 16, 188.
https://doi.org/10.3390/mi16020188
AMA Style
Boccarossa M, Melnyk K, Renz AB, Gammon PM, Kotagama V, Shah VA, Maresca L, Irace A, Antoniou M.
A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations. Micromachines. 2025; 16(2):188.
https://doi.org/10.3390/mi16020188
Chicago/Turabian Style
Boccarossa, Marco, Kyrylo Melnyk, Arne Benjamin Renz, Peter Michael Gammon, Viren Kotagama, Vishal Ajit Shah, Luca Maresca, Andrea Irace, and Marina Antoniou.
2025. "A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations" Micromachines 16, no. 2: 188.
https://doi.org/10.3390/mi16020188
APA Style
Boccarossa, M., Melnyk, K., Renz, A. B., Gammon, P. M., Kotagama, V., Shah, V. A., Maresca, L., Irace, A., & Antoniou, M.
(2025). A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations. Micromachines, 16(2), 188.
https://doi.org/10.3390/mi16020188
