Ackermann, V.; El Amrani, M.; Mohamad, B.; Ben Abbes, R.; Charles, M.; Cavalaglio, S.; Manrique, M.; Buckley, J.; Salem, B.
Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C–V Investigation. Micromachines 2025, 16, 1193.
https://doi.org/10.3390/mi16111193
AMA Style
Ackermann V, El Amrani M, Mohamad B, Ben Abbes R, Charles M, Cavalaglio S, Manrique M, Buckley J, Salem B.
Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C–V Investigation. Micromachines. 2025; 16(11):1193.
https://doi.org/10.3390/mi16111193
Chicago/Turabian Style
Ackermann, Valentin, Mohammed El Amrani, Blend Mohamad, Riadh Ben Abbes, Matthew Charles, Sebastien Cavalaglio, Manuel Manrique, Julien Buckley, and Bassem Salem.
2025. "Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C–V Investigation" Micromachines 16, no. 11: 1193.
https://doi.org/10.3390/mi16111193
APA Style
Ackermann, V., El Amrani, M., Mohamad, B., Ben Abbes, R., Charles, M., Cavalaglio, S., Manrique, M., Buckley, J., & Salem, B.
(2025). Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C–V Investigation. Micromachines, 16(11), 1193.
https://doi.org/10.3390/mi16111193
