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Journal: Micromachines, 2024
Volume: 15
Number: 1126
1126
Article: Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Various Dielectric Passivation Structures for High-Power and High-Frequency Operations: A Simulation Study
Authors: by Ji-Hun Kim, Chae-Yun Lim, Jae-Hun Lee, Jun-Hyeok Choi, Byoung-Gue Min, Dong Min Kang and Hyun-Seok Kim
Link: https://www.mdpi.com/2072-666X/15/9/1126

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