Liu, L.; Guo, J.; Shi, Y.; Zeng, K.; Li, G.
A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures. Micromachines 2024, 15, 772.
https://doi.org/10.3390/mi15060772
AMA Style
Liu L, Guo J, Shi Y, Zeng K, Li G.
A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures. Micromachines. 2024; 15(6):772.
https://doi.org/10.3390/mi15060772
Chicago/Turabian Style
Liu, Li, Jingqi Guo, Yiheng Shi, Kai Zeng, and Gangpeng Li.
2024. "A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures" Micromachines 15, no. 6: 772.
https://doi.org/10.3390/mi15060772
APA Style
Liu, L., Guo, J., Shi, Y., Zeng, K., & Li, G.
(2024). A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures. Micromachines, 15(6), 772.
https://doi.org/10.3390/mi15060772