Zhao, D.; He, L.; Wu, L.; Xiao, Q.; Liu, C.; Chen, Y.; He, Z.; Yang, D.; Lv, M.; Cheng, Z.
Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures. Micromachines 2024, 15, 171.
https://doi.org/10.3390/mi15020171
AMA Style
Zhao D, He L, Wu L, Xiao Q, Liu C, Chen Y, He Z, Yang D, Lv M, Cheng Z.
Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures. Micromachines. 2024; 15(2):171.
https://doi.org/10.3390/mi15020171
Chicago/Turabian Style
Zhao, Dongsheng, Liang He, Lijuan Wu, Qingzhong Xiao, Chang Liu, Yuan Chen, Zhiyuan He, Deqiang Yang, Mingen Lv, and Zijun Cheng.
2024. "Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures" Micromachines 15, no. 2: 171.
https://doi.org/10.3390/mi15020171
APA Style
Zhao, D., He, L., Wu, L., Xiao, Q., Liu, C., Chen, Y., He, Z., Yang, D., Lv, M., & Cheng, Z.
(2024). Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures. Micromachines, 15(2), 171.
https://doi.org/10.3390/mi15020171
