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Journal: Micromachines, 2024
Volume: 15
Number: 1499
1499
Article: Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al₂O₃ Layer Formation: A Study on Preparation Techniques and Performance Impact
Authors: by Hongxuan Guo, Jiahao Yao, Siyuan Chen, Chong Qian, Xiangyu Pan, Kuibo Yin, Hao Zhu, Xu Gao, Suidong Wang and Litao Sun
Link: https://www.mdpi.com/2072-666X/15/12/1499

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