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Journal: Micromachines, 2023
Volume: 14
Number: 291
291
Article: Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier
Authors: by Kathia Harrouche, Srisaran Venkatachalam, Lyes Ben-Hammou, François Grandpierron, Etienne Okada and Farid Medjdoub
Link: https://www.mdpi.com/2072-666X/14/2/291

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