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Journal: Micromachines, 2022
Volume: 13
Number: 169

Article: Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation
Authors: by Gene Sheu, Yu-Lin Song, Ramyasri Mogarala, Dupati Susmitha and Kutagulla Issac
Link: https://www.mdpi.com/2072-666X/13/2/169

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