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Journal: Micromachines, 2022
Volume: 13
Number: 1741

Article: TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode
Authors: by Ruoyu Wang, Jingwei Guo, Chang Liu, Hao Wu, Zhiyong Huang and Shengdong Hu
Link: https://www.mdpi.com/2072-666X/13/10/1741

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