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Journal: Micromachines, 2021
Volume: 12
Number: 721
721
Article: Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics
Authors: by Maksym Dub, Pavlo Sai, Maciej Sakowicz, Lukasz Janicki, Dmytro B. But, Paweł Prystawko, Grzegorz Cywiński, Wojciech Knap and Sergey Rumyantsev
Link: https://www.mdpi.com/2072-666X/12/6/721

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