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Journal: Micromachines, 2021
Volume: 12
Number: 617
617
Article: E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
Authors: by Li-Fang Jia, Lian Zhang, Jin-Ping Xiao, Zhe Cheng, De-Feng Lin, Yu-Jie Ai, Jin-Chao Zhao and Yun Zhang
Link: https://www.mdpi.com/2072-666X/12/6/617

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