Study of the Absorption of Electromagnetic Radiation by 3D, Vacuum-Packaged, Nano-Machined CMOS Transistors for Uncooled IR Sensing

Cherniak, Gil; Avraham, Moshe; Bar-Lev, Sharon; Golan, Gady; Nemirovsky, Yael

doi:10.3390/mi12050563

Open AccessArticle

Study of the Absorption of Electromagnetic Radiation by 3D, Vacuum-Packaged, Nano-Machined CMOS Transistors for Uncooled IR Sensing

by

Gil Cherniak

¹

,

Moshe Avraham

^1,2,

Sharon Bar-Lev

¹,

Gady Golan

²

and

Yael Nemirovsky

^1,*

¹

Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000, Israel

²

Department of Electrical Engineering and Electronics, Ariel University, Ariel 40700, Israel

^*

Author to whom correspondence should be addressed.

Micromachines 2021, 12(5), 563; https://doi.org/10.3390/mi12050563

Submission received: 14 April 2021 / Revised: 12 May 2021 / Accepted: 12 May 2021 / Published: 16 May 2021

(This article belongs to the Special Issue MEMS Packaging Technologies and 3D Integration)

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Abstract

There is an ongoing effort to fabricate miniature, low-cost, and sensitive thermal sensors for domestic and industrial uses. This paper presents a miniature thermal sensor (dubbed TMOS) that is fabricated in advanced CMOS FABs, where the micromachined CMOS-SOI transistor, implemented with a 130-nm technology node, acts as a sensing element. This study puts emphasis on the study of electromagnetic absorption via the vacuum-packaged TMOS and how to optimize it. The regular CMOS transistor is transformed to a high-performance sensor by the micro- or nano-machining process that releases it from the silicon substrate by wafer-level processing and vacuum packaging. Since the TMOS is processed in a CMOS-SOI FAB and is comprised of multiple thin layers that follow strict FAB design rules, the absorbed electromagnetic radiation cannot be modeled accurately and a simulation tool is required. This paper presents modeling and simulations based on the LUMERICAL software package of the vacuum-packaged TMOS. A very high absorption coefficient may be achieved by understanding the physics, as well as the role of each layer.

Keywords: thermal sensors; TMOS sensor; finite difference time domain; optical and electromagnetics simulations

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MDPI and ACS Style

Cherniak, G.; Avraham, M.; Bar-Lev, S.; Golan, G.; Nemirovsky, Y. Study of the Absorption of Electromagnetic Radiation by 3D, Vacuum-Packaged, Nano-Machined CMOS Transistors for Uncooled IR Sensing. Micromachines 2021, 12, 563. https://doi.org/10.3390/mi12050563

AMA Style

Cherniak G, Avraham M, Bar-Lev S, Golan G, Nemirovsky Y. Study of the Absorption of Electromagnetic Radiation by 3D, Vacuum-Packaged, Nano-Machined CMOS Transistors for Uncooled IR Sensing. Micromachines. 2021; 12(5):563. https://doi.org/10.3390/mi12050563

Chicago/Turabian Style

Cherniak, Gil, Moshe Avraham, Sharon Bar-Lev, Gady Golan, and Yael Nemirovsky. 2021. "Study of the Absorption of Electromagnetic Radiation by 3D, Vacuum-Packaged, Nano-Machined CMOS Transistors for Uncooled IR Sensing" Micromachines 12, no. 5: 563. https://doi.org/10.3390/mi12050563

APA Style

Cherniak, G., Avraham, M., Bar-Lev, S., Golan, G., & Nemirovsky, Y. (2021). Study of the Absorption of Electromagnetic Radiation by 3D, Vacuum-Packaged, Nano-Machined CMOS Transistors for Uncooled IR Sensing. Micromachines, 12(5), 563. https://doi.org/10.3390/mi12050563

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

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Study of the Absorption of Electromagnetic Radiation by 3D, Vacuum-Packaged, Nano-Machined CMOS Transistors for Uncooled IR Sensing

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