Order Article Reprints

Huang Y-C, Chiu H-C, Kao H-L, Wang H-C, Liu C-H, Huang C-R, Chen S-W. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate. Micromachines. 2021; 12(5):509. https://doi.org/10.3390/mi12050509

Huang, Yu-Chun, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, and Si-Wen Chen. 2021. "High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate" Micromachines 12, no. 5: 509. https://doi.org/10.3390/mi12050509

Huang, Y.-C., Chiu, H.-C., Kao, H.-L., Wang, H.-C., Liu, C.-H., Huang, C.-R., & Chen, S.-W. (2021). High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate. Micromachines, 12(5), 509. https://doi.org/10.3390/mi12050509