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Journal: Micromachines, 2021
Volume: 12
Number: 488

Article: A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
Authors: by Hujun Jia, Mengyu Dong, Xiaowei Wang, Shunwei Zhu and Yintang Yang
Link: https://www.mdpi.com/2072-666X/12/5/488

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