Jia, H.; Dong, M.; Wang, X.; Zhu, S.; Yang, Y.
A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region. Micromachines 2021, 12, 488.
https://doi.org/10.3390/mi12050488
AMA Style
Jia H, Dong M, Wang X, Zhu S, Yang Y.
A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region. Micromachines. 2021; 12(5):488.
https://doi.org/10.3390/mi12050488
Chicago/Turabian Style
Jia, Hujun, Mengyu Dong, Xiaowei Wang, Shunwei Zhu, and Yintang Yang.
2021. "A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region" Micromachines 12, no. 5: 488.
https://doi.org/10.3390/mi12050488
APA Style
Jia, H., Dong, M., Wang, X., Zhu, S., & Yang, Y.
(2021). A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region. Micromachines, 12(5), 488.
https://doi.org/10.3390/mi12050488