A RF Redundant TSV Interconnection for High Resistance Si Interposer
1
Department of Mechanical & Electrical Engineering, Xiamen University, Xiamen 361102, China
2
School of Electronic and Computer Engineering, Shenzhen Graduate School of Peking University, Shenzhen 518055, China
3
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China
4
Chengdu Ganide Technology Co., Ltd, Chengdu 610000, China
*
Author to whom correspondence should be addressed.
Micromachines 2021, 12(2), 169; https://doi.org/10.3390/mi12020169
Received: 22 January 2021
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Revised: 5 February 2021
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Accepted: 5 February 2021
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Published: 8 February 2021
(This article belongs to the Special Issue MEMS Packaging Technologies and 3D Integration)
Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.
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MDPI and ACS Style
Wang, M.; Ma, S.; Jin, Y.; Wang, W.; Chen, J.; Hu, L.; He, S. A RF Redundant TSV Interconnection for High Resistance Si Interposer. Micromachines 2021, 12, 169. https://doi.org/10.3390/mi12020169
AMA Style
Wang M, Ma S, Jin Y, Wang W, Chen J, Hu L, He S. A RF Redundant TSV Interconnection for High Resistance Si Interposer. Micromachines. 2021; 12(2):169. https://doi.org/10.3390/mi12020169
Chicago/Turabian StyleWang, Mengcheng, Shenglin Ma, Yufeng Jin, Wei Wang, Jing Chen, Liulin Hu, and Shuwei He. 2021. "A RF Redundant TSV Interconnection for High Resistance Si Interposer" Micromachines 12, no. 2: 169. https://doi.org/10.3390/mi12020169
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