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Multi-Bit Biomemory Based on Chitosan: Graphene Oxide Nanocomposite with Wrinkled Surface

by Lei Li 1,2 and Guangming Li 1,*
1
Key Laboratory of Functional Inorganic Material Chemistry (MOE), School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China
2
HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
*
Author to whom correspondence should be addressed.
Micromachines 2020, 11(6), 580; https://doi.org/10.3390/mi11060580
Received: 8 May 2020 / Revised: 4 June 2020 / Accepted: 5 June 2020 / Published: 10 June 2020
Chitosan (CS) is one of the commonly affluent polysaccharides that are attractive biomaterials as they are easily found in different organisms and are biocompatible. An environment-friendly multi-bit biomemory was successfully achieved on the basis of CS as a favorable candidate for resistive-switching memory applications. By incorporating graphene oxide (GO) into CS, the multi-bit biomemory device (indium tin oxide (ITO)/CS:GO/Ni) was obtained through the solution-processable method, which had a high current ratio among a high, intermediate, and low resistance state as well as a low SET/RESET voltage. GO acting as trapping sites in the active layer might be responsible for the biomemory mechanism. This research opens up a new avenue towards renewable and environmentally benign CS-based materials for biodegradable electronic devices. View Full-Text
Keywords: multi-bit biomemory; tristability; CS:GO nanocomposites; wrinkled surface biomaterial multi-bit biomemory; tristability; CS:GO nanocomposites; wrinkled surface biomaterial
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Li, L.; Li, G. Multi-Bit Biomemory Based on Chitosan: Graphene Oxide Nanocomposite with Wrinkled Surface. Micromachines 2020, 11, 580.

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