Next Article in Journal
Direct Patterning of a Carbon Nanotube Thin Layer on a Stretchable Substrate
Next Article in Special Issue
A Designed Broadband Absorber Based on ENZ Mode Incorporating Plasmonic Metasurfaces
Previous Article in Journal / Special Issue
Enhanced Photon Emission Efficiency Using Surface Plasmon Effect of Pt Nanoparticles in Ultra-Violet Emitter
Open AccessArticle

Narrow Linewidth Distributed Bragg Reflectors Based on InGaN/GaN Laser

by 1,2, Junze Li 1,2,*, 1,2, 1,2, 1,2 and Song Sun 1,2,*
1
Microsystems and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China
2
Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China
*
Authors to whom correspondence should be addressed.
Micromachines 2019, 10(8), 529; https://doi.org/10.3390/mi10080529
Received: 5 July 2019 / Revised: 7 August 2019 / Accepted: 9 August 2019 / Published: 11 August 2019
(This article belongs to the Special Issue Nanostructured Light-Emitters)
A variety of emerging technologies, such as visible light communication systems, require narrow linewidths and easy-to-integrate light sources. Such a requirement could be potentially fulfilled with the distributed Bragg reflector (DBR) lasers, which are also promising for the monolithical integration with other optical components. The InGaN/GaN-based surface etched DBR is designed and optimized using the finite-difference-time-domain (FDTD) method to obtain very narrow-band reflectors that can serve as a wavelength filter. The results reveal that the ultimate reflectivity depends on the grating period and duty ratio of the DBR. Based on the design, the DBR lasers with various duty ratios are fabricated, specifically, the 19th, 13th and 3rd order DBR grating with duty ratio set as 50%/75%/95%. The minimum linewidth could be achieved at 0.45 nm from the 19th order grating with a 75% duty ratio. For comparison, the Fabry–Pérot (F–P) based on the same indium gallium nitride/gallium nitride (InGaN/GaN) epitaxial wafer are fabricated. The full width at half maximum (FWHM) of the DBR laser shrank by 65% compared to that of the conventional F–P laser, which might be helpful in the application of the visible light communication system. View Full-Text
Keywords: distributed Bragg reflectors; gratings; GaN-based lasers; linewidth distributed Bragg reflectors; gratings; GaN-based lasers; linewidth
Show Figures

Figure 1

MDPI and ACS Style

Xie, W.; Li, J.; Liao, M.; Deng, Z.; Wang, W.; Sun, S. Narrow Linewidth Distributed Bragg Reflectors Based on InGaN/GaN Laser. Micromachines 2019, 10, 529.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop