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Tuning Electronic Properties of the SiC-GeC Bilayer by External Electric Field: A First-Principles Study

1,*, 1 and 2,3
1
Department of Physics, Shanghai Polytechnic University, Shanghai 201209, China
2
Department of Electronic Engineering, Shanghai Jian Qiao College, Shanghai 201306, China
3
School of Microelectronic, Fudan University, Shanghai 200433, China
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(5), 309; https://doi.org/10.3390/mi10050309
Received: 14 April 2019 / Revised: 29 April 2019 / Accepted: 29 April 2019 / Published: 8 May 2019
(This article belongs to the Section D:Materials and Processing)
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PDF [1242 KB, uploaded 8 May 2019]
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Abstract

First-principles calculations were used to investigate the electronic properties of the SiC/GeC nanosheet (the thickness was about 8 Å). With no electric field (E-field), the SiC/GeC nanosheet was shown to have a direct bandgap of 1.90 eV. In the band structure, the valence band of the SiC/GeC nanosheet was mainly made up of C-p, while the conduction band was mainly made up of C-p, Si-p, and Ge-p, respectively. Application of the E-field to the SiC/GeC nanosheet was found to facilitate modulation of the bandgap, regularly reducing it to zero, which was linked to the direction and strength of the E-field. The major bandgap modulation was attributed to the migration of C-p, Si-p, and Ge-p orbitals around the Fermi level. Our conclusions might give some theoretical guidance for the development and application of the SiC/GeC nanosheet. View Full-Text
Keywords: tunable bandgap; SiC/GeC; electric field; first-principles calculation tunable bandgap; SiC/GeC; electric field; first-principles calculation
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Luo, M.; Yu, B.; Xu, Y.-E. Tuning Electronic Properties of the SiC-GeC Bilayer by External Electric Field: A First-Principles Study. Micromachines 2019, 10, 309.

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