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Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field

1
Micro-Optoelectronic and Nanostructures Laboratory, Faculty of Sciences, University of Monastir, Monastir 5019, Tunisia
2
Univ. Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM, F-38000 Grenoble, France
3
Department of Physics and Astronomy, College of Sciences, King Saud University, Riyadh 11451, Saudi Arabia
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(4), 243; https://doi.org/10.3390/mi10040243
Received: 24 March 2019 / Revised: 7 April 2019 / Accepted: 10 April 2019 / Published: 12 April 2019
(This article belongs to the Special Issue Nonlinear Photonic Devices)
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PDF [1626 KB, uploaded 12 April 2019]
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Abstract

The impact of vertical electrical field on the electron related linear and 3rd order nonlinear optical properties are evaluated numerically for pyramidal GeSn quantum dots with different sizes. The electric field induced electron confining potential profile’s modification is found to alter the transition energies and the transition dipole moment, particularly for larger dot sizes. These variations strongly influence the intersubband photoabsorption coefficients and changes in the refractive index with an increasing tendency of the 3rd order nonlinear component with increasing both quantum dot (QD) size and applied electric field. The results show that intersubband optical properties of GeSn quantum dots can be successively tuned by external polarization. View Full-Text
Keywords: GeSn; quantum dot; electric field; intersubband nonlinear optics; absorption coefficients; refractive index changes GeSn; quantum dot; electric field; intersubband nonlinear optics; absorption coefficients; refractive index changes
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Baira, M.; Salem, B.; Ahamad Madhar, N.; Ilahi, B. Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field. Micromachines 2019, 10, 243.

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