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Fabrication and Characteristics of a SOI Three-Axis Acceleration Sensor Based on MEMS Technology

The Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China
Author to whom correspondence should be addressed.
Micromachines 2019, 10(4), 238;
Received: 31 January 2019 / Revised: 27 March 2019 / Accepted: 7 April 2019 / Published: 9 April 2019
(This article belongs to the Special Issue MEMS Accelerometers)
PDF [3943 KB, uploaded 12 April 2019]


A silicon-on-insulator (SOI) piezoresistive three-axis acceleration sensor, consisting of four L-shaped beams, two intermediate double beams, two masses, and twelve piezoresistors, was presented in this work. To detect the acceleration vector (ax, ay, and az) along three directions, twelve piezoresistors were designed on four L-shaped beams and two intermediate beams to form three detecting Wheatstone bridges. A sensitive element simulation model was built using ANSYS finite element simulation software to investigate the cross-interference of sensitivity for the proposed sensor. Based on that, the sensor chip was fabricated on a SOI wafer by using microelectromechanical system (MEMS) technology and packaged on a printed circuit board (PCB). At room temperature and VDD = 5.0 V, the sensitivities of the sensor along x-axis, y-axis, and z-axis were 0.255 mV/g, 0.131 mV/g, and 0.404 mV/g, respectively. The experimental results show that the proposed sensor can realize the detection of acceleration along three directions. View Full-Text
Keywords: three-axis acceleration sensor; MEMS technology; sensitivity; L-shaped beam three-axis acceleration sensor; MEMS technology; sensitivity; L-shaped beam

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Zhao, X.; Wang, Y.; Wen, D. Fabrication and Characteristics of a SOI Three-Axis Acceleration Sensor Based on MEMS Technology. Micromachines 2019, 10, 238.

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